MODELISATION DE L’INFLUENCE DE LA COMPOSITION CHIMIQUE « x » DES MATERIAUX ARSENIC SUR LES PROPRIETES DE TRANSPORT ELECTRONIQUE

Abstract

This work extends the studies of the effect of the variation of the molar fraction “ x” on the properties optoelectronics of superlattices generated by specific sequences and disordered superlattices. We numerically studied the nature of the states of these structures by exact airy function formalism and transfer-matrix technique. Concerning Structures generated by specific sequences the fault of the potentiel introduced induced into the spectrum of the transmission a fragmentation of the principal minibande in several subminibandes separated by minigaps. The number of minigaps created equal to the number of defects introduced. The observed phenomena are the results of destructive interference of the electronic wave functions due to the phase difference caused by the distance caused by the sequences of each of the series superlattice. Against the results for the disordered structures in dimer and trimer height barriers show the presence of extended states located in the vicinity of resonances and having a high transmission value. Indeed, the existence of extended states is due to the cell (Dimer / Trimer) introduced.