Etude et Simulation de l’Effet Thermique dans les Composants Electroniques à Multi-sources

Abstract

Among the components,heterojunctionbipolar transistors AlGaAs / GaAs HBT have very interesting advantages for microwave applications, fast microwave applications and integrated optoelectronic circuits. The study of thermal phenomena in such transistors is paramount. In this context, we initiate work on the thermal effect of HBT modules but know the physical and technology of this component is very important to predict the thermal behavior and detect hot areas. In this paper, we mentioned various methods for modeling the thermal effect in the electronic components by the analytical method and the TLM method. We have shown that there is equivalence between the diffusion equation and the equation of a transmission line and therefore it is possible to model the phenomenon of diffusion by the propagation of a pulse in a delta network transmission lines (nodes). In first, we studied the thermal diffusion in a bar of semiconductor material and after for an HBT (Heterojunction Bipolar Transistor) component. The application of the TLM method for modeling the thermal diffusion in a bar , both for the one-dimensional or three-dimensional cases, show that the numerical results are in good agreement with the analytical results. This positive test allows us to expand the scope of the TLM method to study HBT thermal component has a finger or three fingers issuers. The results clearly show that of the HBT device are capable of considerable amount of self - generation of heat which must be dissipated quickly to reduce thermo electronic effect coupling and increase the lifetime of the device.