Etude des propriétés optoélectroniques et magnétiques du semiconducteur CdTe à désordre corrélé

dc.contributor.authorZITOUNI ALI
dc.date.accessioned2018-11-10T08:25:45Z
dc.date.available2018-11-10T08:25:45Z
dc.date.issued2014-11-19
dc.description.abstractIn this work, we performed ab-initio calculations using the method of plane waves full potential linearized augmented (FP- LAPW) based on the theory of density functional theory (DFT) to determine the structural, electronic and magnetic properties of CdTe, CdCoTe, CdFeTe and CdMnTe compounds in the cubic phase. We used the generalized gradient approximation (GGA) to treat the term of the exchange and correlation potential. The results obtained show that the test compounds are half- metals in direct gap majority spins against by the compounds possess an indirect gap in the minority spin.en_US
dc.identifier.urihttp://hdl.handle.net/123456789/919
dc.language.isofren_US
dc.subjectab-initio calculation, DFT, GGA, structural properties, semi-metallicen_US
dc.titleEtude des propriétés optoélectroniques et magnétiques du semiconducteur CdTe à désordre corréléen_US
dc.typeThesisen_US

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